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IXKR 40N60C
CoolMOS ? 1) Power MOSFET
in ISOPLUS247 TM Package
V DSS
600 V
I D25
38 A
R DS(on)
70 m Ω
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
Package with Electrically Isolated Base
Preliminary data
G
D
ISOPLUS 247 TM
E153432
G
D
MOSFET
S
G = Gate
Features
S
D = Drain
Isolated base
S = Source
? ISOPLUS247? package with DCB Base
Symbol
Conditions
Maximum Ratings
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
V DSS
V GS
I D25
I D90
dv/dt
E AS
E AR
T VJ = 25°C to 150°C
T C = 25°C
T C = 90°C
V DS < V DSS ; I F ≤ 50A; ? di F /dt ?≤ 100A/μs
T VJ = 150°C
I D = 10 A; L = 36 mH; T C = 25°C
I D = 20 A; L = 5 μH; T C = 25°C
600
±20
38
25
6
1.8
1
V
V
A
A
V/ns
J
mJ
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
? fast CoolMOS ? 1) power MOSFET 3 rd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
? Enhanced total power density
Applications
?
Switched mode power supplies (SMPS)
R DSon
V GS = 10 V; I D = I D90
70 m Ω
?
?
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
V GSth
V DS = 20 V; I D = 3 mA;
2.1
3.9
V
?
?
Welding
Inductive heating
I DSS
V DS = V DSS ; V GS = 0 V; T VJ = 25°C
25 μA
T VJ = 125°C
60
μA
1)
CoolMOS ? is a trademark of
Infineon Technologies AG.
I GSS
V GS = ±20 V; V DS = 0 V
100 nA
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
V GS = 10 V; V DS = 350 V; I D = 50 A
V GS = 10 V; V DS = 380 V;
I D = 50 A; R G = 1.8 Ω
250
25
120
20
30
110
10
nC
nC
nC
ns
ns
ns
ns
V F
(reverse conduction) I F = 20 A; V GS = 0 V
0.9
1.1
V
R thJC
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
0.45 K/W
20080523a
1-2
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